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. 2017 Oct 3;8:773. doi: 10.1038/s41467-017-00907-8

Fig. 3.

Fig. 3

Refractive index modification achieved in the bulk of silicon with ultrashort pulses. Micro-modifications are created at the centre of silicon spheres using focused 60-fs laser pulses with the hyper-NA value of 2.97 (illustrated by the sketch) and then analyzed by infrared microscopy. a Bright-field infrared images of modifications for different number of applied laser pulses. b Transmission image in logarithmic scale revealing a modification after the first applied laser shot. c Differential-longitudinal interferometry measurement (for two pixels A and B shown on the image for 1000 pulses) and corresponding phase image for the modification created with 1000 applied pulses. This indicates a local change of the silicon refractive index Δn < −0.07 after repeated illumination. (scale bars: 2 µm)