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. 2017 Oct 5;7:12706. doi: 10.1038/s41598-017-10661-y

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) A schematic of solar cell configuration and TEM image of a-Si:H thin film solar cells with a p-a-SiC:H window layer (abbreviated p-a-SiC:H solar cell). (b) Tauc’s plots and (c) the depth profiles of atomic ratio between C and Si for p-a-SiC:H window layers with various CH₄ flow rates. (d) I-V characteristics of p-a-Si:H and p-a-SiC:H solar cells under the AM1.5 G solar spectrum (e) EQE and (f) Normalized EQE_loss (QE(−1 V)/QE(0 V)) of p-a-Si:H and p-a-SiC:H solar cells, respectively. (Inset shows the depth profile of bulk-defect densities in the i-a-Si:H layer retrieved from DLCP measurements for p-a-SiC_CH4 = 10:H PV).