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. 2017 Oct 10;8:840. doi: 10.1038/s41467-017-00893-x

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 4 — Photoresponse characteristics and photoconductive gains. a Photocurrent responses and b R trends of 1RQ-OQO phototransistors with respect to incident light power. c Photoconductive gains using three different estimation methods vs. incident light power. d R trends of 1RQ-, 1GQ-, and 1BQ-OQO phototransistors at 487- and 403-nm wavelengths with 10-nW power