Fig. 3.

Resistivity-temperature curve of different samples grown on 300-nm SiO₂/Si substrate. a Few-layer MoS₂. The inset shows the schematic illustration for the measurements. b 5-nm Pd layer. The inset shows the ρ-T curve for the 10-nm Pd layer. c 5-nm Pd-decorated MoS₂ layers. d Resistivity of the Pd-decorated MoS₂ layers as a function of Pd thickness