Fig. 7.

Sensing characteristics of the Pd-decorated MoS₂/Si heterojunction with different Pd thickness, respectively. a d _Pd = ~ 1.0 nm, b d _Pd = ~ 5.0 nm, c d _Pd = ~ 10.0 nm, and d d _Pd = ~30.0 nm. e, f Dependence of the sensitivity and response time of the heterojunctions on Pd thickness, respectively. g–i Schematic illustration of the reaction of H₂ on the Pd-decorated MoS₂/Si heterojunction with different Pd thickness