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. 2017 Oct 17;8:999. doi: 10.1038/s41467-017-01047-9

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 3 — Transistor characteristics and contact resistances of single-crystalline organic semiconductors. Two-terminal field-effect mobilities of a rubrene (RU) and b BP2T single-crystal OFETs with various electrodes. Yellow-to-magenta marks indicate Au electrodes, and gray and blue-to-cyan marks indicate Ca electrodes: Open circles, closed triangles, closed squares, and crosses indicate no interlayer, pc-OSC interlayer, pc-OSC/TTC interlayer, and CsF interlayer, respectively. Red closed diamonds represent the highest mobilities obtained for FETs employing Au/pc-OSC/TTC and Ca/pc-OSC/TTC asymmetric electrodes (the present work). Open diamonds represent the highest mobilities of BP2T^{6, 21} and rubrene^{25, 26} single-crystal FETs reported in literature so far. Transfer characteristics of c RU and d BP2T OFETs respectively with various electrodes. Contact resistances of the source electrodes (R _c) normalized by the channel width (W) of various electrodes for e, f RU and g, h BP2T for hole and electron injection