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. 2017 Oct 11;8:2126–2138. doi: 10.3762/bjnano.8.212

Figure 4.

Figure 4

(a) p-type characteristic curves IdsVg of a FET based on the Mg-doped single GaAs nanowire #1 grown on GaAs(111)B substrate, as a function of Vds and measured at 300 K. (b) Free carrier density and field mobility variation with Vds in the FET nanowire.