Table 1.

Summary of the channel length (L), average nanowire diameter (d), threshold voltage (V_th), transconductance (g_m), hole mobility (μ) and free hole concentration (p), for three assembled FETs based on nanowires from sample A.

nanowire	L	d	Vds	Vth	gm	μ	p
	(μm)	(nm)	(mV)	(V)	(S)	(cm2/Vs)	(cm−3)
#1	2.9	190	50	2.37	2.97 × 10−11	0.33	2.4 × 1016
#2	8.8	187	500	3.24	5.35 × 10−9	18.4	3.8 × 1016
#3	2.9	179	100	11.37	6.76 × 10−9	38.8	1.4 × 1017