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. 2017 Oct 26;7:14146. doi: 10.1038/s41598-017-14291-2

Figure 1.

Figure 1

(ac) TEM images and (df) TEM-EDS elemental mapping images after PCT of 0, 15, and 40 h for a SiON:H film, respectively. As-deposited sample was deposited on Si substrate at 160 °C and a N2O flow of 14 sccm. The blue, green and red parts in (d,e) and (f) represent SiO2:H, SiON:H and Si substrate regions, respectively. The scales of all the images are the same as shown in Fig. 1(f).