Table 1.

Mass density and atomic concentration of SiON:H films as a function of the N₂O gas flow. The last column represents the thicknesses of fully oxidized SiO₂:H after PCT of 30 h. The samples were deposited at 160 °C and 10 sccm for both SiH₄ and NH₃.

N2O sccm	Density g/cm3	Si at%	O at%	N at%	H at%	Oxidation nm
0	2.25	27.9	0.0	45.2	26.8	5
2	2.22	27.0	9.8	37.3	25.9	7
4	2.18	29.1	16.5	32.2	22.2	8
6	2.17	28.7	20.5	28.8	22.0	10
8	2.15	29.7	26.9	24.5	18.9	18
10	2.13	29.1	32.3	20.8	17.9	30