Table 2.

Mass density and atomic concentration of SiON:H films as a function of the deposition temperature. The last column represents the thicknesses of fully oxidized SiO₂ after PCT of 30 h. The samples were deposited at 6 sccm for N₂O and 10 sccm for both SiH₄ and NH₃.

Temperature °C	Density g/cm3	Si at%	O at%	N at%	H at%	Oxidation nm
100	2.12	26.6	26.8	24.0	22.6
150	2.17	27.6	24.1	26.0	22.3	13.0
200	2.25	29.3	17.2	31.2	22.3	5.5
250	2.30	29.8	15.3	33.6	21.3	3.5
300	2.47	31.2	13.6	35.1	20.1	3.5