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. 2017 Oct 26;7:14146. doi: 10.1038/s41598-017-14291-2

Table 3.

Mass density and atomic concentration of SiON:H films as a function of PCT time. The as-deposited film was deposited at 160 °C and 10 sccm for N2O. The density and composition after PCT indicates the values in the oxidized layers.

PCT time h Density g/cm3 Si at% O at% N at% H at%
0 2.10 29.6 33.0 21.1 16.3
30 2.00 30.1 61.8 8.1
50 2.00 29.3 62.2 8.2
70 2.00 29.0 63.0 8.0