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. 2017 Oct 27;3(10):eaao4204. doi: 10.1126/sciadv.aao4204

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Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).

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Fig. 2 — (A) Schematic of the film deposition process and AX salt posttreatment. (B) J-V characteristics of CsPbI₃ QD devices treated with FAI (pink), methylammonium iodide (MAI) (green), formamidinium bromide (FABr) (yellow), methylammonium bromide (MABr) (gray), cesium iodide (CsI) (dark blue), and neat EtOAc control (blue). (C and D) ToF-SIMS depth profile of CsPbI₃ QD films (C) without and (D) with an FAI posttreatment. Intensity is normalized to total counts at each data point. (E) Ratios of Cs/Pb, I/Pb, and FA/Pb calculated from the integrated ToF-SIMS signal intensities throughout the film. int., integrated; arb., arbitrary.