. 2017 Oct 31;7:14422. doi: 10.1038/s41598-017-14825-8

Table 1.

Summary of wavelength, MQWs structure, and relative IQE from previous research results and this study.

Wavelength	MQW structure (Well/Barrier)	Condition of PL measurement at RT/LT	Relative IQE I_RT/I_LT	Author^ref.
247 nm	Al_xGa_1−xN/AlN	300 K/8.5 K	69%	Banal et al.¹²
250 nm	Al_0.7Ga_0.3N/AlN	285 K/12 K	50%	Bhattacharyya et al.²⁵
278 nm	Al_xGa_1−xN/Al_yGa_1−yN	300 K/14 K	55%	Shatalov et al.⁹
280 nm	Al_xGa_1−xN/Al_yGa_1−yN	300 K/77 K	50%	Hirayama et al.¹¹
280 nm	In_xAl_yGa_1−x−yN/In_xAl_zGa_1−x−zN	300 K/77 K	86%	Hirayama et al.¹¹
283 nm	Al_0.4Ga_0.6N/Al_0.5Ga_0.5N	300 K/10 K	43%	Dong et al.¹⁷
281 nm	Al_0.5Ga_0.5N/Al_0.6Ga_0.4N	300 K/12 K	85%	NCHU