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Transport characteristics for pristine graphene and N-doped graphene. (a) Schematic structure of top-gated graphene field-effect transistors (GFETs) (b) Id–Vg curves for pristine, NG1, NG3, and NG5 FETs, with the drain voltage maintained at 0.1 V and a gate voltage sweep from −2.5 to 1 V; and (c) Mobility as a function of carrier density for pristine graphene, NG1, NG3, and NG5 FETs.
