Table 1.
Comparison of N-doping and the electrical performance for N-doped graphene obtained using different growth approaches.
| N-Doped Graphene Synthesis Method | Synthesis Temperature | Nitrogen Content (*) | Nitrogen Configurations (#) | ID/IG | Dirac Point Shift | Carrier mobility N-Doped Graphene/Pristine Graphene (cm2·V−1·s−1) | Ref. |
|---|---|---|---|---|---|---|---|
| CVD monolayer graphene growth on NH3 plasma pre-treated Cu foil | 1000 °C | 3% | Pyrrolic, Graphitic | 0.17 | 0.7 to −1.2 V (top gate) | ~1100/~1000 (electron branch) ~1100/800 (hole branch) |
This work |
| CVD monolayer graphene growth on Cu using C2H2, H2 and NH3 as precursors | 900 °C | 16% | Pyridinic | >2 | N/A | N/A | [47] |
| CVD monolayer graphene growth on Cu using CH4 and NH3 as precursors | 1000 °C | 6.4% | Pyrrolic | ~0.7 | N/A | N/A | [48] |
| CVD monolayer graphene growth on Cu (CH4 + NH3) | 800 °C | 8.9% | Graphitic | ~0.30 | N/A | 450/1200 | [35] |
| CVD few-layered (2–8 layers) graphene growth on Ni (CH4 + NH3 + Ar) | 1000 °C | 4% | Pyrrolic, Pyridinic | 0.06–0.25 | N/A | N/A | [49] |
| CVD few-layered graphene growth on Ni with embedded nitrogen | 1000 °C | 2.9% | Pyrrolic, Pyridinic, Graphitic | 2.1 | more than 60 to −50 V (back gate) | N/A | [29] |
| CVD on Cu using pyridine as the precursor | 1000 °C | 2.4% | Pyridinic, Pyrrolic | 0.3–0.4 | 10 to −10 V (back gate) | 5/2000 | [9] |
| PECVD growth of NG on SiO2/Si using C2H2 and NH3 plasma as precursors | 475 °C | N/A | Pyridinic | ~0.7 | 20 to −20 V (back gate) | 400/NA | [17] |
| Post-annealing of CVD graphene (on Cu foil) in NH3 gas | 850 °C | 0.25% | Pyrrolic, Pyridinic | ~1 | N/A | N/A | [7] |
| Exfoliated graphene with N2 ion implantation and post-annealing in NH3 | 1100 °C | 1.1% | Pyridinic | ~0.6 | ~2 V to ~−7 V (back gate) | 6000/6700 (electron branch) 6000/15000 (hole branch) |
[2] |
(*) Only the highest nitrogen content samples were chosen in each study; (#) The nitrogen configurations were sequenced by the nitrogen content ratio for each study. The nitrogen pyridinic, pyrrolic, and graphitic configurations accounted for a binding energy of approximately 398.2, 400.3, and 401.5 eV, respectively. CVD = chemical vapor deposition. PECVD = plasma-enhanced CVD.