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. 2017 Oct 11;10(10):1164. doi: 10.3390/ma10101164

Figure 10.

Figure 10

SEM images of the CP Ti surface etching in H2SO4/HCl at different temperatures. (a) H2SO4 (90 °C)/HCl (80 °C) (1000× magnification); (b) H2SO4 (90 °C)/HCl (80 °C) (10,000× magnification); (c) H2SO4 (100 °C)/HCl (80 °C) (1000× magnification); (d) H2SO4 (90 °C)/HCl (80 °C) (10,000× magnification); (e) H2SO4 (110 °C)/HCl (80 °C) (1000× magnification); (f) H2SO4 (110 °C)/HCl (80 °C) (10,000× magnification); (g) H2SO4 (120 °C)/HCl (70 °C) (1000× magnification); (h) H2SO4 (90 °C)/HCl (70 °C) (10,000× magnification); (i) H2SO4 (120 °C)/HCl (60 °C) (1000× magnification); (j) H2SO4 (90 °C)/HCl (60 °C) (10,000× magnification); (k) H2SO4 (120 °C)/HCl (80 °C) (1000× magnification); and (l) H2SO4 (120 °C)/HCl (80 °C) (10,000× magnification).