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. 2017 Nov 9;7:15212. doi: 10.1038/s41598-017-15065-6

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) Photo of the grown AlGaN/GaN on h-BN, (b) High resolution X-ray diffraction 2θ − ω scans of the grown AlGaN/GaN heterostructure on h-BN using Al_0.14Ga_0.86N as a nucleation layer (NL), the red curve is the measurement and the blue curve presents the simulation result. The inset is a schematic of the grown structure. (c) High resolution TEM image showing the interface between the 2D layered h-BN and the AlGaN nucleation layer. (d) Energy dispersive X-ray spectroscopy (EDX) elemental mapping of Al.