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. 2017 Nov 9;7:15212. doi: 10.1038/s41598-017-15065-6

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) Photo of the wafer-scale processed AlGaN/GaN sensors, (b) I_DS-V_DS characteristic of an AlGaN/GaN device with 2 µm gate length (c) Wafer mapping of the gate pinching, with white areas representing masked-off regions that include TLM patterns (d) Histogram of the pinching distribution across the wafer.