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. 2017 Nov 9;7:15212. doi: 10.1038/s41598-017-15065-6

Figure 4.

Figure 4

Response of an AlGaN/GaN sensor, with a gate size of 2 μm × 200 μm, to NO2 gas for a concentration of 100 ppm at 30 °C. (a) Before the transfer, (b) after the transfer to the flexible template and (c) Repeated measure after the transfer showing the stability of the transferred device after 9 cycles.