Figure 1.

Fabrication of magnetic Hall elements based on large area CVD graphene encapsulated in CVD h-BN on Si/SiO₂ substrate. (a) Picture of the chip carrier with batch-fabricated graphene Hall elements. (b) The schematic representation of the fabricated Hall sensor devices with h-BN/graphene/h-BN heterostructure and 1D edge contacts. (c) Optical microscope picture of the batch-fabricated chip and individual graphene Hall element. (d) Schematic of the fabrication process steps involving the preparation of h-BN/graphene/h-BN heterostructures by layer transfer method, followed by patterning and formation of 1D edge metal contacts.