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. 2017 Nov 16;7:15749. doi: 10.1038/s41598-017-16114-w

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Evolution of D_it and τ_it in the depletion region with gate voltage for 50 nm (left) and 200 nm (right) AlN/p-Si capacitors. Slow and fast traps are denoted by suffixes 1 and 2 respectively. Higher trap densities are observed in the case of the thicker AlN film while the time constants remain similar.