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. 2017 Nov 16;7:15749. doi: 10.1038/s41598-017-16114-w

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© The Author(s) 2017

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SIMS profile of boron concentration as a function of depth for the four different AlN film thicknesses. The dotted lines indicate AlN/p-Si interfaces. The peak concentrations and the integrated areal density of boron atoms in Si are higher for thinner films as diffusion into AlN itself increases with film thickness.