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. 2017 Nov 16;7:15749. doi: 10.1038/s41598-017-16114-w

Figure 5.

Figure 5

SIMS profile of aluminum concentration as a function of depth from the backside of 50 and 200 nm thick AlN/p-Si samples. The dotted lines indicate Si SIMS count intensity which shows the transition from Si to AlN. The peak concentrations and the integrated areal density of aluminum atoms in Si are slightly higher for the 50 nm films.