Table 1.

Interface trap densities, for the four different AlN thicknesses, as extracted from the hysteretic shift in flat band voltage and Terman’s method.

AlN film thickness (nm)	Trap Density from Hysteresis CoxΔVFB/q (cm−2)	Trap Density at midgap from Terman’s method (cm−2)
50	1.26 × 1012	1.74 × 1012
100	1.22 × 1012	2.07 × 1012
150	1.33 × 1012	—
200	—	—

Trap densities for the thicker samples cannot be extracted as the inversion capacitance deviates significantly from its expected value as discussed in the text, and in the 200 nm case, observed C_min > C_FB.