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. 2017 Jul 14;4(11):1700204. doi: 10.1002/advs.201700204

Figure 3.

Figure 3

a) JV curves of the devices based on (FA)0.75(MA)0.25SnI3 with different SnF2 molar ratios. b) JV curves of the devices based on (FA)0.75(MA)0.25SnI3 with different perovskite layer thicknesses. c) JV curves of the devices based on (FA)x(MA)1 −xSnI3 (x = 0.00, 0.25, 0.50, 0.75, and 1.00). All the curves were measured using forward scan mode at a scan rate of 300 mV s−1 under the simulation of AM 1.5G, 100 mW cm−2.