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. 2017 Jul 14;4(11):1700204. doi: 10.1002/advs.201700204

Figure 4.

Figure 4

a) J–V curves of the champion device measured using both forward and reverse scan mode at a scan rate of 300 mV s−1 under the simulation of AM 1.5G, 100 mW cm−2. b) J–V curves of the champion device measured at different scan rates using forward scan mode under the simulation of AM 1.5G, 100 mW cm−2. c) IPCE spectrum of the encapsulated (FA)0.75(MA)0.25SnI3‐based device. d) Steady‐state J sc and PCE of the (FA)0.75(MA)0.25SnI3‐based device measured at a bias of 0.46 V under AM 1.5G, 100 mW cm−2 irradiation. e) PCE histogram of 30 (FA)0.75(MA)0.25SnI3‐based devices from several fabrication batches. f) Normalized PCE of a (FA)0.75(MA)0.25SnI3‐based device stored in glovebox over a period of 400 h.