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. 2017 Jul 14;4(11):1700204. doi: 10.1002/advs.201700204

Figure 6.

Figure 6

a) Time‐resolved spectra of (FA)x(MA)1 −xSnI3 (x = 0.00, 0.25, 0.50, 0.75, and 1.00) films deposited on quartz substrates. b) Nyquist plots of the devices based on (FA)x(MA)1 −xSnI3 (x = 0.00, 0.25, 0.50, 0.75, and 1.00) at 0.3 V under simulated 100 mW cm−2 AM 1.5G illumination measured at frequencies ranging from 100 000 to 100 Hz. Inset: the equivalent circuit model for fitting the plots. c) The fitted R rec at different applied voltages obtained from the EIS analysis.