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. 2017 Nov 23;7:16121. doi: 10.1038/s41598-017-16251-2

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) AFM height profile of laser irradiated region (A), non-irradiated region (B), and substrate (ground): the measured thickness between A and B is ~2.88 nm; between the substrate and A is ~0.9 nm (Inset shows the optical image of the laser irradiated area for 15 seconds on 5 × 5 μm, scale bar: 5 μm). (b) An average AFM height profile of the laser irradiated region (A) shows the etched thickness of ~2.92 nm. (c) Raman spectrum of a single-layer WS₂ film (A) using the 514 nm laser excitation and its Lorentzian peak fits. (d) Raman spectra showing the peak distance (△k) between 2LA and A_1g measuring at 65.5 cm⁻¹ and 70.5 cm⁻¹ for regions A and B, respectively. (e) PL spectra of region A and B showing ~6 times increase of PL emission intensity and ~0.05 eV shift of PL peak position by the laser irradiation.