Figure 12.
(left panel) Sketch of a InSe-based FETfor optoelectronics; (middle panel) Behavior of the responsivity as a function of the power and of the drain-source voltage; (right panel): The photocurrent of the InSe device on PET film (shown in the inset in the bent geometry) acquired when the device was in planar geometry with 633 nm illumination of 22.74, 8.67, 4.46, 2.85, 0.70, and 0.29 mW·cm−2 for purple, blue, green, yellow, orange, and red curves, respectively. Reproduced with permission from Ref. [23]. Copyright American Chemical Society, 2014.