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. 2017 Nov 8;7(11):380. doi: 10.3390/nano7110380

Figure 5.

Figure 5

(a) Schematic of the vertically-graded bandgap structure of ITO/ZnO/CdSe/CdSexTe1−x/CdTe/MoOx/Au, (b) energy diagram of the above devices, J-V characteristics of the above devices (c) under light and (d) dark, (e) EQE properties of the above devices, (f) the PCE of devices with different thickness of CdSe0.2Te0.8 alloy NC films (device structure: ITO/ZnO/CdSe/CdSe0.2Te0.8/CdTe/MoOx/Au).