Figure 3.
Electrical characterization of the optospintronic devices. (a) Back-gate voltage dependence of graphene conductivity. Inset shows the I–V dependence of electrodes 1 and 2, which are indicated in the optical image in Figure 4c. (b) Back-gate voltage dependences of the four-terminal resistivity of the pristine graphene (black) and of the WSe2/graphene heterostructure (red). Inset shows the optical image of the device. Scale bar is 5 μm. (c) Photoluminescence measurements of monolayer WSe2.