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. 2017 Nov 30;7:16670. doi: 10.1038/s41598-017-16505-z

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Left: Cross-sectional schematic and simulation layout (not in scale) used to evaluate the impact of a back-reflecting element (the 100-nm wide trench) on the measured CE. Right: 2D-FDTD simulation of the optimum grating transmission, when a 100 nm wide hole is inserted in the Si waveguide at a distance of 500 μm from the end of the grating section, at different etching percentage. The blue curve represents the unperturbed case, while the yellow and purple curves correspond to hole etching percentages of respectively 40% and 60%.