Table 3.

Optimal trench and tooth width obtained from the optimization of the apodized GC in 260 nm SOI platform, having F ₀ = 0.9 and R = 0.025 μm⁻¹.

Period	L E (nm)	L O (nm)	Period	L E (nm)	L O (nm)	Period	L E (nm)	L O (nm)
1	60	540	9	138	484	17	225	422
2	69	533	10	148	477	18	237	413
3	79	526	11	159	469	19	249	405
4	88	520	12	170	461	20	261	396
5	98	513	13	180	454	21	273	387
6	108	506	14	191	446	22	286	378
7	118	498	15	203	438	23	298	369
8	128	491	16	214	430	24	311	//