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. 2017 Nov 30;8:1876. doi: 10.1038/s41467-017-01993-4

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Fig. 6 — Summary of charge transfer in semi-insulating 4H-SiC under various illumination conditions. Strong transitions are shown by thicker arrows, and the steady-state population after illumination is approximatively represented by the gray area over each state. a Above-bandgap excitation and electron-hole generation. b Excitation above the VV⁻ photoionization transition (~1.3 eV). c Excitation below the VV⁻ photoionization transition, but above VV⁰ two-photon absorption