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. 2017 Dec 1;7:16805. doi: 10.1038/s41598-017-17156-w

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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(a) Modification of the total DOS around the band gap region of ZB-ZnS upon Cu doping at different dosages. (b) Spin-resolved DOS of Cu-doped (3.2%) ZB-ZnS; spin-down states are reported with negative values. The projected DOS on Cu-derived states is also indicated in orange. In all panels, the Fermi Level of the undoped system is chosen as reference (0 eV) for the energy scale, while the dotted line represents the Fermi level of the doped structure.