Fig. 1.

Temperature- and current-dependent parallel magnetic-field–induced reentrant superconductivity. (A) Schematics of the superconducting MoGe film in a triple-axis vector magnet. The out-of-plane magnetic field $H_z$ is perpendicular to both the film plane and the current direction. The in-plane magnetic field $H_x$ is parallel to the film plane and perpendicular to the current direction. The in-plane magnetic field $H_y$ is parallel to both the film plane and the current direction. The electrical current is applied parallel to the $y$ direction. A, Bottom Left Inset shows a photo of the micropatterned MoGe strip. (Scale bar, 50 μm.) (B) Magneto-resistance measured at $T=5.8$ K for a $100$-nm-thick sample under magnetic fields in three orthogonal directions x (blue), y (red), and z (green), respectively. The resistance curve for the parallel field ($H_y$) shows a resistant state at intermediate fields and a reentrance of the superconducting state at higher fields. (C–F) Experimental results (C and D) and TDGL simulations (E and F) for the parallel field-dependent resistance at various temperatures (C and E) and at different currents (D and F). The zero-field superconducting critical temperature and zero-temperature upper critical field are $T_c=6.2$ K and $H_{c2}=6.7$ T, respectively. Other simulation parameters, impurity density and sample thickness, are $N_{imp}=35$ and $L_z={\xi }_0$ (${\xi }_0\approx 6$nm is zero-temperature coherence length).