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. 2017 Nov 13;114(48):E10274–E10280. doi: 10.1073/pnas.1619550114

Fig. 2.

Fig. 2.

Temperature dependence of vortex motion-induced resistance behavior. (A) The temperature dependence of the resistance under parallel magnetic fields of 0 T (black square), 0.3 T (red circle), and 0.6 T (green triangle) obtained with an applied current of 1.0 mA. The main panel in A is a semilog plot and Inset shows the corresponding linear plot. The resistive states below the kinks shown by arrows are typical features originating from vortex motion. (B) Simulation results for the temperature dependence of the voltage (magneto-resistance) at different magnetic fields (0.08 in the dissipationless, Lorentz-free regime; 0.13 in the intermediate resistive regime; and 0.17 in the reentrant regime). The simulations are conducted using a current density of 0.18 and for a typical system size with Nimp=35 inclusions.