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. 2017 Dec 13;7:17532. doi: 10.1038/s41598-017-17785-1

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© The Author(s) 2017

Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.

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Multibit operation of a device using the Al_xO_y/TiO₂ RRAM stack. (a) Cumulative probability distribution function plot of a device with a record of 92 distinct resistive states. All states are read at 0.5 V, are closely packed and individually discernible; (b) switching energy required to switch a typical Al_xO_y/TiO₂ device. Only the energy expended during programming is regarded for this graph; (c) 8 hours retention measurements for select resistive states at room temperature. (d) 8 hours retention measurements for select resistive states at 85 °C. Resistance can be retained even at elevated temperatures.