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. 2017 Nov 7;45(22):12848–12861. doi: 10.1093/nar/gkx1056

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© The Author(s) 2017. Published by Oxford University Press on behalf of Nucleic Acids Research.

This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by-nc/4.0/), which permits non-commercial re-use, distribution, and reproduction in any medium, provided the original work is properly cited. For commercial re-use, please contact journals.permissions@oup.com

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Figure 6. — Changes in I-SceI flanking sequence influence the secondary structures utilized during SD-MMEJ repair. Individual repeat motifs in SD-MMEJ consistent deletion junctions, with their relative prevalence indicated by color. Percent SD-MMEJ consistent deletion reads was calculated by dividing the total number of reads for each repeat motif by the total number of SD-MMEJ consistent deletion reads. Repeat motifs corresponding to loop-out mechanisms are indicated by straight lines, while snap-back mechanisms are indicated by hatched lines. Red vertical lines indicate the TTAT/AATA overhangs produced by I-SceI. (A) The red box highlights snap-back synthesis products utilizing a GGCC direct repeat, while the blue box highlights loop-out synthesis using the GCGG/CCGC inverted repeat. (B) The red box highlights a CTAG repeat motif created by both snap-back and loop-out repair mechanisms. (C) The red box highlights repeat motifs resulting from snap-back synthesis utilizing part/all of a 6 nt TCCACT/AGTGGA inverted repeat or an 8 nt CTAGTGGA direct repeat. The blue box indicates repeat motifs resulting from snap-back synthesis using part/all of a 9 nt CTAGTGGAC/GTCCACTAG inverted repeat. (D) The arrow indicates a repeat motif with a CAGG microhomology that anneals with CCTG on the left side of the break.