Figure 9.

a) Photoinduced I–V curves of MoTe₂/MoS₂ heterojunction on a logarithmic scale along. Inset: The schematic and of MoTe₂/MoS₂ photodetector. b) Time domain of short‐circuit current (ISC) and under 1‐Hz RBG LED illuminations. c) Photoresponse characteristics of responsivity based on MoTe₂/MoS₂ photodetector under RGB LEDs and IR (800 nm) laser, obtained at zero volt. Reproduced with permission.16 d) The schematic illustrations of type‐II interband excitation processes in MoTe₂/MoS₂ vdW heterostructures. Inset: The schematic diagram of a MoTe₂/MoS₂ vdW heterostructure device under infrared light excitation. e) The curves of I _ds–V _ds under infrared light illumination of 1550 and 2000 nm. Inset: Photovoltaic effect of the fabricated device under 1550 nm light illumination. Characterization of ReSe₂/MoS₂ heterojunction and device. Reproduced with permission.166 Copyright 2016, American Chemical Society. f) Output plots of the devices in the dark and under 8.15 mW cm⁻² light illumination. Inset: Schematic of the device based on the p–n ReSe₂/MoS₂ heterojunction. Reproduced with permission.87 Copyright 2015, Springer.