Figure 10.

a) The output characteristics under different power of incident light. Inset: Schematic structure of P(VDF‐TrFE) top‐gate FET based on few‐layer MoTe₂ was illuminated under a laser. b) The rise time and the fall time of photocurrent and fitting curves by exponent function. Reproduced with permission.75 Copyright 2016, Royal Society of Chemistry. c) The curves of I _ds–V _ds measured in O₂ or air in the dark or under red light illumination. Inset: Schematic structure of ReSe₂‐based photodetector. d) The rise time and the fall time of photoresponse in O₂ environment. Reproduced with permission.88 Copyright 2014, Royal Society of Chemistry. e) The I–V curves of the photodetector were illuminated with 633 nm light (20 mW cm⁻²) in different conditions. Inset: Schematic structure of Mo:ReSe₂‐based FET. f) The rise time and the fall time of photoresponse under illumination of 633 nm in NH₃ environment. Reproduced with permission.120 Copyright 2014, the authors, published under CC‐BY‐4.0 license.