Table 1.

Parameters of typical TMDs8, 16, 189 (ML: Monolayer, E: Experimental value, C: Calculated value)

TMDs	Crystal structures	Types	Bandgaps (Bulk/ML) [eV]	Carrier mobility [cm2 V−1 s−1]	References
MoS2	1T/2H	n‐type	1.2 (ind.)/1.8 (dir.)	15–60 (E) 340 (C)	2, 69, 70, 71
MoSe2	1T/2H	p‐type	1.4 (ind.)/1.58 (dir.)	≈50 (E) 240 (C)	73, 74
MoTe2	1T/1T′/2H/Td	p‐type	0.88 (ind.)/1.10 (dir.)	25–68 (E) 2526 (C)	34, 35, 36, 75, 76
WS2	1T/2H	n‐type	1.4 (ind.)/2.1 (dir.)	50–180 (E) 1103 (C)	77, 78, 79
WSe2	1T/2H	p‐type	1.2 (ind.)/1.65 (dir.)	250 (E) 705 (C)	80, 81
WTe2	1T/1T′/Td	Semimetal	–	–	64, 82
ReS2	1T′/Td	n‐type	1.5 (dir.)/1.58 (dir.)	30–40 (E)	24, 40, 83, 84, 85, 86
ReSe2	1T′	p‐type	1.27 (dir.)/1.24 (ind.)	4–11 (E)	48, 53, 87, 88, 89