Fig. 3.
Thickness-dependent quantum transport characteristics. a Temperature dependence of the SdH oscillations for the 12 nm Cd3As2 film, plotted against 1/B after subtracting a smooth background from R xx. b Dingle analysis of the oscillation amplitude to obtain effective mass and quantum scattering time (inset). c Landau-level fan diagram plotted for the series of films with different thicknesses, and its magnification to evaluate the intercept for the 12 nm film (inset). The integer (half-integer) indices at R xx peak (valley) are denoted by closed (open) circles. In the thicker 16 and 23 nm films, spin splitting of the oscillations occurs above the critical field B c. d Fourier transformation of the SdH oscillations below 12 T to extract the oscillation frequencies B F,1 and B F,2