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. 2017 Dec 22;7:18058. doi: 10.1038/s41598-017-18444-1

Figure 1.

Figure 1

(a) Schematic of fabricating graphene FET devices based on the e-beam bombardment technique for removing PMMA layer used for transferring graphene. (b) Optical image of graphene FET devices with the part of PMMA layer removed by the e-beam processes (scale bar: 20 μm). (c) AFM image of a graphene FET device.