Figure 13.

(a) Dynamic response of the Nb-doped MoSe₂ devices at NO₂ concentrations ranging from 3 to 50 ppm; and (b) responses of the three devices as a function of the NO₂ gas concentration. (c) Resistance change data over 120 days: Nb-doped MoSe₂ devices showed negligible resistance change, differently from MoSe₂ devices; (d) Comparison of the long-term stability of the three devices with respect to the gas sensing response. All gas-sensing tests were performed at an operating temperature of 150 °C. Reprinted with permission from [92]. Copyright (2017) American Chemical Society: Washington, DC, USA.