Figure 14.
(a) Optical microscope image of the MoTe2 field-effect transistor (FET). Scale bar is 5 μm; (b) Atomic force microscopy (AFM) topography image of the MoTe2 FET. Thickness of the MoTe2 is 3.4 nm. Scale bar is 5 μm; (c) High-resolution transmission electron microscopy (TEM) image of a typical exfoliated MoTe2 film. Scale bar is 2 nm. Reprinted from [112], MDPI, Basel, Switzerland.