Table 2.

Summary of MoS₂ gas sensing devices, target chemical compounds and performances. RT stands for room temperature (¹ in N₂ atmosphere; ² in Ar atmosphere; ³ in presence of a relative humidity (RH) of 30%; ⁴ in presence of a relative humidity (RH) of 45%).

Ref.	Material	Growth Technique	Device Type	Gas and Temperature	Performances
[58]	MoS2	CVD	Resistive	NH3-RT NO2-RT	<2%@20ppm ≈27%@20ppm
[59]	MoS2	CVD	Resistive	NO2-RT	≈120%@1ppm 1
[61]	MoS2	Mechanical Exfoliation	FET	NH3-RT NO2-RT	≈50%@200ppm 1 ≈400%@20ppm 1
[65]	MoS2	CVD	FET	NH3-RT NO2-RT	≈50%@200ppm 2 ≈50%@100ppb 2
[66]	MoS2	Liquid Exfoliation	Resistive	NO2-200 °C	5.8@1ppm
[68]	MoS2 + Pd NPs	Drop Casting + Evaporation	Resistive	H2-RT	≈35%@1%
[69,70]	MoS2/Si	Magnetron Sputtering	Resistive pn junction	NH3-RT H2-RT	≈300%@50ppm 15.4%@5000ppm 3
[71]	MoS2 + ZnO	Hydrothermal	Resistive	Ethanol-260 °C	42.8@50ppm
[72]	MoS2	Hydrothermal	Resistive	NO2-150 °C	78%@50ppm
[73]	MoS2 Porous	Sputtering + Film Conversion	Resistive	Ethanol-RT	≈2%@1ppm 1
[74]	MoS2/GO QDs	Exfoliation + Sonication	Resistive	NO2-RT NH3-RT	≈35%@10ppm 1 ≈20%@10ppm 1
[76]	MoS2 Flakes	Sonication	Resistive	NO2-100 °C CNH3-100 °C	≈10%@10ppm 1 ≈35%@10ppm 1
[77]	SnO2@MoS2	Hydrothermal	Resistive	Ethanol-280 °C	≈50@50ppm
[78]	SnO2@MoS2	Hydrothermal	FET	NO2-RT	≈28%@10ppm
[79]	MoS2@TiO2	Hydrothermal	Resistive	Ethanol-150 °C	14.2@100ppm 4
[80]	MoS2/rGO	Hydrothermal	Resistive	NO2-RT	≈60%@2ppm
[81]	MoS2	Liquid Exfoliation	FET	NO2-RT	≈11%@1ppm 1