Figure 4.

Interference of consecutively patterned lines as a function of the pattern half-pitch. (a) Topography image of line arrays patterned with half-pitches of 10, 14, 17, 21, and 30 nm at 600 °C and 24 nN. (b) Average cross sections of two consecutively patterned lines from (a) for the four lowest half-pitch values. The horizontal dashed black line marks the unpatterned PPA surface level. (c) Average line depths (circles) and rim heights (diamonds) as a function of the half-pitch. Dashed lines are guides for the eye.