Figure 5.

(a) SEM image of SiNW patterns with half-pitches of 14 nm (top) and 16 nm (bottom). For the 14 and 16 nm half-pitch SiNWs, a LER (3σ) of 2.6 ± 0.4 nm and 2.4 ± 0.3 nm was measured, respectively. To perform the LER analysis, the whole area of the image for each half-pitch was taken. The error values given denote standard deviations of the LER measured for at least 20 edges. (b,c) STEM cross sections of a 14 nm half-pitch SiNW array. A lamellae was prepared by focused ion beam milling after deposition of 45 nm SiO_x by plasma-enhanced chemical vapor deposition and a thick layer of Pt. The black holes (marked by the white dashed circle) are cavities formed during the deposition of SiO_x. The STEM image in (c) resolves the crystalline silicon lattice of the sub-10 nm wide nanowires. The box is a guide for the eye. (d) 14 nm half-pitch L-shaped SiNWs; (e) 11 nm half-pitch dense lines transferred into the 20 nm HM8006 transfer mask.